Pa1 Al3 is a semiconductor compound in the aluminum-based intermetallic or aluminum phosphide family, though the exact phase composition requires clarification from the supplier. This material is of research and emerging industrial interest for high-temperature semiconductor applications where conventional silicon or gallium arsenide may be inadequate. Its potential lies in power electronics, optoelectronics, or thermal management contexts where aluminum's lightweight advantage combined with semiconducting properties offers a competitive edge over heavier alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00490 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2630 | eV/atom | — |