Pa1 Ag1 O3

semiconductor

· Pa1 Ag1 O3

Pa₁Ag₁O₃ is an experimental mixed-metal oxide semiconductor combining palladium and silver with oxygen in a perovskite-related structure. This compound belongs to the family of ternary oxides being investigated for advanced electronic and photonic applications where the dual-metal composition offers tunable properties unavailable in single-metal alternatives. Research into such materials focuses on potential use in next-generation devices requiring controlled semiconducting behavior, though this specific composition remains primarily in exploratory development rather than established industrial production.

experimental semiconductor researchphotocatalytic applicationsthin-film electronicssensor developmentmixed-metal oxide optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	147.6	GPa	—
Shear Modulus(G)	54.06	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9519	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.584	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Pa1 Ag1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control