P8 Th6 is a thorium-containing semiconductor compound, likely a research-phase material within the rare-earth or actinide semiconductor family. While thorium-based semiconductors remain primarily experimental, they are investigated for specialized high-temperature, high-radiation environments where conventional semiconductors fail, particularly in nuclear applications and advanced space systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,944.4 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 8,731.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.09130 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.526 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data