P8 Th6 is a thorium-containing semiconductor compound, likely a research-phase material within the rare-earth or actinide semiconductor family. While thorium-based semiconductors remain primarily experimental, they are investigated for specialized high-temperature, high-radiation environments where conventional semiconductors fail, particularly in nuclear applications and advanced space systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 109.9 | GPa | — | ||
Shear Modulus(G) | 60.20 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.09130 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.526 | eV/atom | — |