P8 S10 is a semiconductor material, likely a phosphorus-silicon compound or related III-V/IV semiconductor alloy, though the specific composition requires clarification from suppliers. This material family is typically investigated for optoelectronic and high-frequency electronic applications where tunable bandgap properties or specific lattice parameters offer advantages over conventional silicon or compound semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 2,106.2 | ksi | — | ||
Shear Modulus(G) | 1,359.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.227 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1780 | eV/atom | — |