P6 N10

semiconductor

· P6 N10

P6 N10 is a semiconductor material, likely a nitride-based compound from the III-V or related semiconductor families, though its exact composition is not publicly specified in standard references. This material is typically investigated for high-frequency, high-power, or high-temperature electronic applications where wide bandgap semiconductors offer advantages over conventional silicon. The nitride designation suggests potential use in RF power devices, optoelectronics, or harsh-environment sensing where thermal stability and electrical performance under demanding conditions are critical.

RF power amplifiersHigh-temperature electronicsWide-bandgap semiconductor devicesOptoelectronic componentsResearch and development applicationsHarsh-environment sensing

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	145.3	GPa	—
Shear Modulus(G)	92.73	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.849	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.3080	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

P6 N10

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control