P6 K4 is a semiconductor material whose specific composition is not publicly detailed, likely a phosphide or nitride compound given the designation scheme common in III-V and related semiconductor families. This material is primarily investigated for optoelectronic and high-frequency applications where wide bandgap or specialized carrier properties offer advantages over conventional silicon or gallium arsenide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20.62 | GPa | — | ||
Shear Modulus(G) | 10.93 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6956 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5240 | eV/atom | — |