P6 In2 is an indium-based intermetallic compound belonging to the rare-earth or transition metal–indium family of semiconductors. This material is primarily of research interest for high-frequency and high-power electronic devices, where indium compounds offer superior electron mobility and thermal properties compared to conventional silicon-based alternatives. Applications span III-V semiconductor technologies, optoelectronic components, and specialized RF/microwave circuits where the combination of indium's electronic characteristics and the specific phase structure provide performance advantages in extreme operating conditions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01320 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.09600 | eV/atom | — |