P4 Zn2 Ge2 is a zinc-germanium semiconductor compound with a tetragonal crystal structure belonging to the IV-group semiconductor family. This is a research-phase material primarily investigated for optoelectronic and photovoltaic applications, offering potential advantages in bandgap engineering and carrier mobility compared to conventional binary semiconductors. The material's mixed cation composition positions it within the broader context of ternary and quaternary semiconductors being explored as alternatives to established technologies like silicon and gallium arsenide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 73.99 | GPa | — | ||
Shear Modulus(G) | 50.01 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.054 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2320 | eV/atom | — |