P3 N5 is a phosphorus nitride semiconductor compound belonging to the III-V nitride family, a class of wide-bandgap materials used in high-performance electronic and optoelectronic devices. This material is primarily employed in power electronics, RF (radiofrequency) applications, and high-temperature device operations where superior thermal stability and electrical performance are required compared to conventional silicon-based semiconductors. Engineers select nitride compounds like P3 N5 for applications demanding operation at elevated temperatures, high power densities, or extreme environmental conditions where thermal management and reliability are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23,528.3 | ksi | — | ||
Shear Modulus(G) | 20,249.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.806 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2440 | eV/atom | — |