P24 is a semiconductor material with unspecified composition, likely a phosphide or related compound semiconductor based on its designation. It is employed in optoelectronic and high-frequency electronic applications where direct bandgap properties and carrier mobility are critical, offering potential advantages in light emission, detection, or high-speed switching compared to silicon-based alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,460.1 | ksi | — | ||
Shear Modulus(G) | 687.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.778 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1740 | eV/atom | — |