P2S7V1Rb1 is a phosphorus-vanadium-rubidium compound semiconductor with mixed-valence properties, likely synthesized for research applications rather than established industrial production. This material belongs to the family of phosphide-based semiconductors with alkali metal doping, which are of interest for exploring novel electronic and optical properties in condensed matter physics and materials chemistry. The rubidium doping and vanadium substitution suggest potential applications in energy conversion devices or as a precursor compound for investigating polyanion framework materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,619.6 | ksi | — | ||
Shear Modulus(G) | 2,151.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00380 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6520 | eV/atom | — |