P2 S7 K1 In1 is a ternary or quaternary semiconductor compound containing phosphorus, sulfur, potassium, and indium. This appears to be a research-phase material rather than a commercial semiconductor; compounds in this compositional family are primarily explored for optoelectronic and photovoltaic applications due to the band-gap engineering potential offered by mixed anion and cation systems. Engineers would investigate this material for emerging applications in thin-film solar cells, light-emitting devices, or photodetectors where unconventional element combinations can provide tunable electronic properties and reduced manufacturing costs compared to established III-V semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,535.7 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 1,811.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.021 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5540 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data