P2S6Sn1 is a mixed-metal chalcogenide compound combining tin with phosphorus and sulfur, belonging to the family of ternary metal sulfides and phosphides. This material is primarily of research interest for semiconductor and optoelectronic applications, where its layered crystal structure and tunable band gap make it a candidate for emerging device architectures such as two-dimensional electronics, photovoltaics, and photodetectors. The tin-containing phosphorus sulfide system has potential advantages over purely organic semiconductors in thermal stability and chemical robustness, though industrial-scale production and standardization remain limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.038 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3100 | eV/atom | — |