P2S2Nb2 is an experimental transition metal chalcogenide semiconductor compound containing niobium and sulfur in a layered crystal structure. This material belongs to the family of 2D transition metal dichalcogenides (TMDs) and related phases, which are primarily of research interest for their unique electronic and optical properties at the nanoscale. While not yet commercialized in mainstream applications, compounds in this material family show promise for next-generation electronics, optoelectronics, and energy storage devices where layer-dependent properties and reduced dimensionality are advantageous.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 143.2 | GPa | — | ||
Shear Modulus(G) | 79.39 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00220 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8760 | eV/atom | — |