P2 Mn₂Se₆ is a layered manganese selenide semiconductor compound belonging to the broader family of transition metal chalcogenides, which are of significant interest in materials research. This material is primarily investigated in academic and research settings for potential applications in optoelectronics, thermoelectrics, and energy storage devices, where its layered crystal structure and semiconducting properties may offer advantages in carrier transport and tunable bandgap engineering compared to conventional bulk semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 30.78 | GPa | — | ||
Shear Modulus(G) | 17.51 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01690 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2040 | eV/atom | — |