P2 Mn₂ Ba₁ is an experimental semiconductor compound combining manganese and barium in a specific crystal structure designated as the P2-type layered framework. This material belongs to the family of transition metal oxides and mixed-metal compounds being investigated for their electronic and magnetic properties. Research on this composition focuses on understanding how structural layering and elemental substitution affect semiconductor behavior, with potential applications in energy storage and catalysis rather than established commercial use.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,705.3 | ksi | — | ||
Shear Modulus(G) | 6,140.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00590 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7920 | eV/atom | — |