P2 Mn2 Ba1

semiconductor

· P2 Mn2 Ba1

P2 Mn₂ Ba₁ is an experimental semiconductor compound combining manganese and barium in a specific crystal structure designated as the P2-type layered framework. This material belongs to the family of transition metal oxides and mixed-metal compounds being investigated for their electronic and magnetic properties. Research on this composition focuses on understanding how structural layering and elemental substitution affect semiconductor behavior, with potential applications in energy storage and catalysis rather than established commercial use.

experimental energy storagecatalytic applicationsbattery electrode researchtransition metal oxide researchsolid-state chemistry studiesemerging photocatalysis

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	87.60	GPa	—
Shear Modulus(G)	42.34	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00590	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7920	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

P2 Mn2 Ba1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control