P2 I4 is a compound semiconductor material belonging to the phosphide-iodide family, representing an emerging material system in solid-state electronics research. This material is primarily explored in fundamental research contexts for potential optoelectronic and photovoltaic applications, where its electronic structure and band gap characteristics may offer advantages in light emission, detection, or energy conversion. P2 I4 exemplifies experimental semiconductors being investigated to address performance limitations of conventional materials in next-generation devices, though industrial-scale deployment remains limited and material properties continue to be actively characterized.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,605.1 | ksi | — | ||
Shear Modulus(G) | 989.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.560 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.05000 | eV/atom | — |