P2 H8 I2 is a semiconductor compound with a designation suggesting a specific stoichiometric or structural phase within a phosphorus-iodine-hydrogen material system. While detailed composition information is not provided, this material likely represents a research-stage or specialized semiconductor relevant to halide-based or phosphide semiconductor chemistry. Interest in such compounds typically centers on optoelectronic or photovoltaic applications where alternative bandgap engineering or unique charge-carrier properties compared to conventional semiconductors (Si, GaAs) could provide advantages in niche applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 17.04 | GPa | — | ||
Shear Modulus(G) | 10.33 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.908 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.09200 | eV/atom | — |