P2 Ge1 Cd1

semiconductor

· P2 Ge1 Cd1

P2 Ge1 Cd1 is an experimental III-VI semiconductor compound combining germanium and cadmium in a specific stoichiometric ratio, representing a niche material in the broader family of II-IV and III-VI semiconductors. This composition sits at the intersection of research into narrow-bandgap and infrared-active semiconductors, where cadmium-germanium alloys have been explored for optoelectronic and detector applications requiring sensitivity in the infrared spectrum. The material is primarily of research interest rather than established production use; engineers would consider it only for specialized photonic or radiation detection projects where its particular bandgap alignment offers advantages over more conventional alternatives like CdTe or germanium homojunctions.

infrared detectorsoptoelectronic researchnarrow-bandgap semiconductorsexperimental photonicsradiation detectionmaterials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00150	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4730	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

P2 Ge1 Cd1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control