P2 Ba1 Os2 is a barium osmium compound semiconductor, likely a layered or perovskite-derived oxychalcogenide phase in early-stage research rather than an established commercial material. This composition falls within the broader family of transition metal barium compounds, which are investigated for their electronic and catalytic properties, particularly in contexts where combined ionic and electronic conductivity, or redox activity, is desired. As a research material, it represents exploration of rare earth–group 8 metal chemistry for next-generation energy storage, electrocatalysis, or solid-state device applications where conventional semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,465.8 | ksi | — | ||
Shear Modulus(G) | 7,826.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00400 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6930 | eV/atom | — |