P12 Ru4 is a ruthenium-containing semiconductor compound, likely a research or specialized material designed for high-performance electronic or optoelectronic applications. While composition details are not fully specified, ruthenium-based semiconductors are of interest in advanced device physics for their potential in high-frequency electronics, extreme environment sensing, and catalytic semiconductor applications where conventional materials reach their limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 22,426 | ksi | — | ||
Shear Modulus(G) | 17,270.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.011 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5150 | eV/atom | — |