P1 Zr1 is a zirconium-based semiconductor material, likely a research or specialized compound within the zirconium family. While its exact composition is not specified, zirconium semiconductors are explored for high-temperature electronics, nuclear applications, and advanced optoelectronic devices where thermal stability and radiation resistance are critical. Engineers would consider this material when conventional semiconductors (silicon, gallium arsenide) cannot tolerate extreme operating environments or when zirconium's unique electronic properties are needed for specialized sensing or power applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 135.1 | GPa | — | ||
Shear Modulus(G) | 88.70 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01380 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.408 | eV/atom | — |