P1 S4 In1 is a III-V semiconductor compound in the phosphide family, likely containing indium as a primary constituent based on its designation. This material belongs to the indium phosphide (InP) or related indium-phosphide-based system class, which is research-focused for high-frequency and optoelectronic applications. InP-based semiconductors are valued in telecommunications and high-speed electronics for their direct bandgap and carrier mobility advantages over silicon, particularly in infrared optoelectronics, millimeter-wave devices, and integrated photonic circuits where thermal stability and frequency response are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25.60 | GPa | — | ||
Shear Modulus(G) | 15.50 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.329 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4040 | eV/atom | — |