P1 Ga1 is a gallium-based semiconductor compound, likely a III-V semiconductor material in the gallium arsenide (GaAs) or gallium phosphide (GaP) family. This material class is valued in optoelectronic and high-frequency applications where direct bandgap properties and high electron mobility enable superior performance compared to silicon-based alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,230.7 | ksi | — | ||
Shear Modulus(G) | 7,782.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.482 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4310 | eV/atom | — |