P1 Ga1 is a gallium-based semiconductor compound, likely a III-V semiconductor material in the gallium arsenide (GaAs) or gallium phosphide (GaP) family. This material class is valued in optoelectronic and high-frequency applications where direct bandgap properties and high electron mobility enable superior performance compared to silicon-based alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,230.7 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 7,782.7 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.482 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4310 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data