OsWO₂S is an experimental ternary compound semiconductor combining osmium, tungsten, oxygen, and sulfur—a layered mixed-metal chalcogenide belonging to the broader family of transition metal dichalcogenides and oxychalcogenides under active research. This material is primarily investigated in academic and laboratory settings for optoelectronic and catalytic applications, exploiting the synergistic electronic properties of multiple transition metals to enhance light absorption, charge carrier mobility, or electrochemical reactivity compared to binary alternatives like WS₂ or MoS₂.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2000 | eV | — | ||
Magnetic Moment(μB) | -0.2557 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.140 | eV/atom | — |