OsGaON2 — Properties & Data | MatWorld

OsGaON2

ceramic

· OsGaON2

OsGaON₂ is an experimental ternary ceramic compound combining osmium, gallium, oxygen, and nitrogen. This material represents research into mixed-anion ceramics that potentially combine high thermal stability with electronic functionality, making it of interest for next-generation applications requiring simultaneous mechanical and electronic performance. As an early-stage research compound, OsGaON₂ belongs to the family of oxynitride ceramics, which are still being explored for specialized high-temperature and semiconductor applications where conventional oxide or nitride ceramics have limitations.

experimental oxynitride ceramicshigh-temperature coatings researchsemiconductor substrate developmentrefractory compound researchadvanced functional ceramics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	1.270	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.600	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

OsGaON2

Electrical Properties

Other Properties

Regulatory Screening

Environmental