OsGaO2S is an ternary ceramic compound combining osmium, gallium, oxygen, and sulfur—a mixed-anion ceramic in the oxysulfide family that remains largely in the research phase. This material class is investigated for semiconducting and photocatalytic applications where the dual oxygen–sulfur framework can provide tunable electronic properties and enhanced light absorption compared to conventional oxides or sulfides. OsGaO2S represents emerging work in sustainable materials chemistry, with potential relevance to photocatalysis, optoelectronics, and energy conversion, though industrial applications are not yet established.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.000851 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.260 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data