OsGaN3 — Properties & Data | MatWorld

OsGaN3

ceramic

· OsGaN3

OsGaN3 is an experimental ceramic compound combining osmium, gallium, and nitrogen, representing a research-phase material in the wide-bandgap semiconductor and refractory ceramic family. This material is primarily of academic interest for potential high-temperature, high-power electronic applications and advanced optoelectronic devices, though it remains largely in the laboratory development stage rather than established industrial production. The osmium content and gallium nitride (GaN) family connection suggest potential utility in extreme-environment applications, though practical advantages over mature GaN-based or other refractory alternatives are still being evaluated.

high-temperature electronics (research)wide-bandgap semiconductorsrefractory coatings (exploratory)extreme-environment devices (pre-commercial)optoelectronics developmentadvanced ceramic research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.7520	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.840	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

OsGaN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental