OsBeO3 is an experimental oxide semiconductor compound combining osmium and beryllium in a perovskite-like crystal structure. This material remains largely in research phase, with potential applications in advanced electronics and optoelectronics where the unique properties of osmium (high density, corrosion resistance) and beryllium (low density, thermal conductivity) oxides could be exploited. Materials in this chemical family are investigated for niche high-performance applications where conventional semiconductors (Si, GaAs) reach performance limits, though practical manufacturing and cost barriers typically restrict these compounds to specialized research environments rather than widespread industrial use.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 0.6000 | eV | — | ||
Magnetic Moment(μB)2 entries | 0.01200 | μB | — | ||
| ↳ | 0.0000218 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -0.5820 | eV/atom | — | ||
| ↳ | 1.500 | eV/atom | — |