OsAsS is a ternary semiconductor compound combining osmium, arsenic, and sulfur. This is a research-phase material within the broader family of metal chalcogenide and pnictide semiconductors, studied primarily for potential optoelectronic and thermoelectric applications where unusual band structure or high atomic mass elements may offer performance advantages.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.300 | eV | — |