Os2N4 is an experimental osmium nitride semiconductor compound under investigation for advanced materials applications. This material belongs to the transition metal nitride family, which exhibits interesting electronic and mechanical properties due to the strong bonding between osmium and nitrogen atoms. Research on Os2N4 is primarily driven by theoretical and computational studies exploring its potential in extreme-environment electronics and hard coating applications, where the combination of high hardness and semiconducting behavior could offer advantages over conventional materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 52,658.4 | ksi | — | ||
Shear Modulus(G) | 34,182.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00750 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3960 | eV/atom | — |