Os1N2 is an experimental osmium nitride semiconductor compound, representing a refractory nitride material in early-stage research. This material belongs to the transition metal nitride family, which is of interest for extreme-environment applications due to the inherent hardness and thermal stability of osmium-based phases. Current applications remain primarily in academic research and materials development rather than established industrial production, with potential future relevance in ultra-high-temperature electronics, wear-resistant coatings, and specialized optical devices, though practical engineering adoption requires further characterization and process optimization.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 48,708.5 | ksi | — | ||
Shear Modulus(G) | 12,177.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00340 range 0.000900–0.00590median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.8380 range 0.7710–0.9050median of 2 measurements | eV/atom | — |