Os1N1 is a semiconductor compound composed of osmium and nitrogen, representing an experimental material in the refractory nitride family. While not yet commercialized at scale, osmium nitrides are investigated for ultra-high-temperature electronics and extreme-environment applications where conventional semiconductors fail, leveraging osmium's exceptional density and chemical stability. This material class shows potential in specialized research contexts for high-temperature sensors, power electronics, and radiation-hardened devices, though practical engineering adoption remains limited pending refinement of synthesis methods and device integration protocols.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 42,766.8 | ksi | — | ||
Shear Modulus(G) | 5,453.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01470 range 0.000500–0.02890median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.9900 range 0.5670–1.413median of 2 measurements | eV/atom | — |