O9 Ge2 In6 Pt1

semiconductor

· O9 Ge2 In6 Pt1

O₉Ge₂In₆Pt₁ is an experimental quaternary semiconductor compound combining germanium, indium, platinum, and oxygen in a complex oxide matrix. This material represents advanced research in mixed-metal semiconductors, where the platinum dopant and indium-germanium oxide framework are investigated for potential thermoelectric, optoelectronic, or high-temperature electronic applications. Such compositions are typically studied in laboratory settings to explore novel band-gap engineering and charge-carrier control rather than established industrial production.

Experimental thermoelectric devicesAdvanced optoelectronics researchHigh-temperature semiconductor applicationsMaterials research and developmentBand-gap engineering studiesEmerging electronics prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.467	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.524	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O9 Ge2 In6 Pt1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control