O9 Ba1 Ta2 Bi2
semiconductorO9Ba1Ta2Bi2 is an experimental oxide semiconductor compound containing barium, tantalum, and bismuth elements, likely developed for research into mixed-metal oxide systems with potential functional properties. This material belongs to the family of complex oxides that are of interest in solid-state electronics and materials science, though it remains primarily a laboratory compound rather than an established commercial material. Engineers and researchers would evaluate this compound for novel electronic, photonic, or electrochemical applications where the combined properties of these constituent elements—particularly tantalum's refractory characteristics and bismuth's semiconducting behavior—might offer advantages in niche high-performance or specialized device contexts.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |