O8Zn2Ga4 is a ternary oxide semiconductor compound combining zinc and gallium in an oxygen-rich spinel or mixed-valence crystal structure. This is a research-phase material studied for potential optoelectronic and photocatalytic applications, particularly within the zinc oxide and gallium oxide material families known for wide bandgap semiconducting behavior. The material's combination of constituents suggests interest in transparent conductors, UV photodetectors, or photocatalytic water splitting, where the zinc–gallium oxide system may offer tunable electronic properties compared to single-component alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26,073 | ksi | — | ||
Shear Modulus(G) | 12,493.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.617 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.940 | eV/atom | — |