O8V2Y2 is an experimental oxide-based semiconductor compound containing oxygen, vanadium, and yttrium elements. This material belongs to the family of mixed-metal oxides under active research for advanced electronic and optoelectronic applications, where the combination of vanadium and rare-earth yttrium dopants offers potential for tuned electrical conductivity and optical properties. The material's development reflects research into next-generation semiconductors for power electronics, sensing devices, and photonic applications where traditional silicon-based solutions face limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,863.8 | ksi | — | ||
Shear Modulus(G) | 8,678 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.776 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.239 | eV/atom | — |