O8V2In2 is an intermetallic compound combining vanadium and indium oxides, representing a research-stage material in the oxide semiconductor family with potential applications in electronic and photonic devices. This compound falls within the broader class of ternary oxide semiconductors, which are investigated for their tunable electronic properties and potential use in advanced device architectures where conventional binary semiconductors reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.973 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.174 | eV/atom | — |