O8V2Er2 is a rare-earth containing semiconductor compound featuring erbium as a key dopant element, likely developed for specialized photonic or optoelectronic applications. This material belongs to the family of rare-earth-doped semiconductors and represents a research-phase composition rather than a widely commercialized product. Its erbium content positions it for telecommunications and optical amplification contexts, where rare-earth ions are valued for their unique electronic and luminescent properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21,206.1 | ksi | — | ||
Shear Modulus(G) | 9,173.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.767 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.239 | eV/atom | — |