O8Sc2V2 is a research-phase intermetallic or oxide compound containing scandium and vanadium, classified as a semiconductor material. This composition represents an experimental system likely under investigation for advanced electronic or photonic applications, as the combination of transition metals suggests potential for tailored band gap engineering or enhanced charge carrier properties. The material remains in the exploratory phase and is not yet established in mainstream industrial production; its development context suggests potential relevance to next-generation semiconductor devices, but comprehensive performance validation and scalability assessment would be necessary before engineering adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 158.3 | GPa | — | ||
Shear Modulus(G) | 49.90 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.470 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.078 | eV/atom | — |