O8 Sc2 As2 is an experimental semiconductor compound combining scandium and arsenic elements in an oxide-based system. This material belongs to the family of rare-earth and transition metal arsenides, which are primarily investigated in solid-state physics and materials research for potential optoelectronic and electronic device applications. Such compounds are of interest for specialized semiconductor research rather than established high-volume manufacturing, as they offer unique band structure properties that differ from conventional III-V semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 159.2 | GPa | — | ||
Shear Modulus(G) | 77.89 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.697 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.377 | eV/atom | — |