O8Sb2Bi2 is a compound semiconductor composed of oxygen, antimony, and bismuth, representing an exotic ternary oxide system with potential applications in thermoelectric and optoelectronic device research. This material belongs to the broader family of bismuth-antimony oxides, which are primarily investigated in academic and industrial research settings for their unique electronic properties arising from the heavy elements bismuth and antimony. The combination of these elements creates a material system of interest for next-generation thermoelectric converters and potentially for specialized semiconductor applications where conventional materials show limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 16,076.6 | ksi | — | ||
Shear Modulus(G) | 9,750.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.679 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.510 | eV/atom | — |