O8S2Mn2 is an experimental manganese-based compound belonging to the oxysulfide semiconductor family, combining oxygen, sulfur, and manganese elements in a stoichiometric ratio. This material is primarily of research interest for potential applications in photocatalysis, energy storage, and next-generation semiconductor devices where manganese-based systems offer tunable electronic properties and cost advantages over precious-metal alternatives. The combination of oxygen and sulfur ligands creates unique defect chemistry and band structure characteristics that researchers are exploring for optoelectronic and catalytic applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 54.47 | GPa | — | ||
Shear Modulus(G) | 36.10 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3146 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.473 | eV/atom | — |