O8S2Cd2 is a cadmium-based semiconductor compound with a mixed anionic structure combining oxygen and sulfur. This material belongs to the family of II-VI semiconductors and represents a research-phase compound designed to explore bandgap engineering and optoelectronic properties through mixed anion composition. Such cadmium-containing semiconductors have historically been investigated for photovoltaic, photodetector, and radiation detection applications, though cadmium toxicity and regulatory restrictions limit industrial deployment compared to cadmium-free alternatives like CdTe or emerging perovskite systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 66.43 | GPa | — | ||
Shear Modulus(G) | 29.48 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.187 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.419 | eV/atom | — |