O8Rb3Nb1 is an experimental mixed-metal oxide semiconductor containing rubidium and niobium, likely part of research into complex oxide phases with potential electronic or photonic functionality. While not yet commercialized, materials in this compositional family are investigated for their semiconducting properties and potential applications in energy conversion or catalysis, where the combination of alkali metal and transition metal oxides can create unique electronic structures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 37.13 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 17.32 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.683 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.531 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data