O8P2Mn2 is an experimental manganese-based oxide semiconductor compound with a complex ternary or quaternary chemistry. While not widely commercialized, manganese oxides in this compositional family are of research interest for applications requiring tunable electronic properties, magnetic behavior, or catalytic function. The specific stoichiometry suggests potential for perovskite-related or layered oxide structures, making it relevant to researchers exploring novel semiconductors with mixed-valence manganese sites.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 108.9 | GPa | — | ||
Shear Modulus(G) | 11.73 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3833 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.066 | eV/atom | — |