O8 Ni2 As2 Ba1

semiconductor

· O8 Ni2 As2 Ba1

O8Ni2As2Ba1 is a quaternary intermetallic semiconductor compound combining barium, nickel, arsenic, and oxygen in a layered crystal structure. This is a research-phase material, primarily of interest in solid-state physics and materials chemistry for exploring exotic electronic properties rather than an established engineering material with widespread industrial deployment. The barium-nickel-arsenic family is investigated for potential applications in thermoelectric devices, superconductivity research, and other advanced electronic phenomena where the interplay between the metallic and semimetallic constituents may yield useful functional properties.

thermoelectric researchsolid-state physicssuperconductor precursorssemiconductor device researchintermetallic compound studiesfunctional materials exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8714	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.524	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O8 Ni2 As2 Ba1

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control