O8 Mg2 In4

semiconductor

· O8 Mg2 In4

O8Mg2In4 is an intermetallic compound combining magnesium and indium with oxygen, belonging to the family of ternary oxide semiconductors. This is a research-phase material studied for potential optoelectronic and photovoltaic applications, where the mixed-metal oxide composition may offer tunable bandgap properties and enhanced carrier transport compared to binary oxide semiconductors. Engineers would consider this compound for next-generation thin-film devices or transparent electronics applications where magnesium and indium oxides show complementary properties.

Research semiconductor compoundsThin-film optoelectronicsTransparent conductive oxidesPhotovoltaic developmentHigh-mobility semiconductor layers

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.073	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.053	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O8 Mg2 In4

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control